Gallium Nitride (GaN) replaces silicon semiconductor devices by offering faster switching power devices with higher breakdown voltage and lower on-resistance. GaN is referred as better material than other power semiconductor material silicon carbide (SiC) for some of the applications.
The leading semiconductor technology research company Imec said it has now developed a complete 200mm CMOS-compatible GaN process line, which is reaching maturity. Imec's process line is open to fabless companies interested in low-volume production of GaN-on-Si devices.
Imec said its portfolio includes three types of buffers optimized for breakdown voltage and low traps-related phenomena (i.e. current dispersion): a step graded AlGaN buffer, a super lattice buffer, and a buffer with low-temperature AlN interlayers. Imec explored side-by-side enhancement mode power devices of the MISHEMT and p-GaN HEMT type, as well as a gate-edge terminated Schottky power diode featuring low reverse leakage and low turn-on voltage.
Imec claims its enhancement mode power devices shows a threshold voltage beyond +2V, an on-resistance below 10 ohm mm and output current beyond 450 mA/mm.
imec further exploring novel substrates to improve the quality of the epitaxial layers, new isolation modules to increase the level of integration, and the development of advanced vertical devices.