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Date: 12-07-15

Radiation effects and electrical reliability lab for FDSOI chips

STMicroelectronics and the French Institute of Materials, Microelectronics and Nanosciences in Provence (IM2NP – CNRS / Aix-Marseille University / University of Toulon / ISEN engineering school), member of the Carnot STAR (Science and Technology for Research Applications) Institute have announced the official launch of Radiation Effects and Electrical Reliability (REER) Joint Laboratory to do research on reliability of latest electronic components in terms of withstanding radiation and also general reliability.

REER mainly to focus on the effect of radiation on digital nanometer-scale circuits and the electrical reliability of nanometer-scale CMOS (complementary metal-oxide semiconductor) technologies for applications such as the automotive sector, networks, medical, space and security.

ST said "For these types of applications, the intrinsic constraints of electronic components (electrical fields, mechanical stress, temperature, etc.) and some environmental constraints (especially particle radiation from natural or artificial sources) are becoming an increasingly critical issue for current and future generations of integrated circuits."

The accurate characterisation, modelling and simulation of integrated circuits is one of the key objectives of the new joint research facility.

The joint laboratory to research on fundamental aspects of phenomena at the atomic level to systems, materials, the physics of devices and the design of robust circuits.

The reliability of chips made using 28-nanometer technology node and beyond by using FDSOI (fully depleted silicon-on-insulator) is part of this research program.

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