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Date: 30-06-15

Wearable and IoT demand 16nm/14nm process

28 nm semiconductor process technology is predicted as a long-life node, but it may not turn out to be that accurate, when it doesn't offer huge market advantage compared to 16 nm and 14 nm. You have quite a good semiconductor manufacturing capacity come-up or fast coming-up both in the 16 nm and 14 nm at TSMC, Samsung and Globalfoundries and soon UMC. The 16 nm 14 nm advantages outweigh that of 28 nm.

The move to 16nm FinFET give 2x performance gains within the same power envelope compared to 28nm semiconductor chips.

Today's IoT powered wearable devices not only need power saving but also higher processing power to handle voice inputs as well as some other human interface inputs. There is a increasing demand for flexible artificial-intelligence at the network’s edge, which are IOT powered consumer devices such as wearables as well as some other controlling and monitoring devices used in industrial application.

Most of the leading semiconductor companies have already done extensive evaluation and testing of their cores, hardware accelerators, interconnect fabrics and other IP on 16nm and 14nm FinFET. In fact they're moving towards 10 nm faster.

Even the devices such as microcontrollers also soon may move into deeper nodes such as 16 nm, 14nm, to take advantage of market situation . Of course there is one interesting process called FDSOI, which can make use of non finFET process at deeper nodes.

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