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Date: 29-05-14

New Atomic Layer Deposition processes for Cu and Nb2O5 in chip manufcturing

Picosun Oy is now offering Atomic Layer Deposition (ALD) processes for copper and niobium oxide deposition used in manufacture of semiconductor ICs and other such nanotech devices including MEMS. The new processes are designed to deposit Ultra-thin copper films with high level of uniformity and conformality both in planar as well as 3D-integrated semiconductor ICs. Niobium oxide (Nb2O5) is deposited on devices and systems to protect them from moisture and corrosion. Picosun said "The now developed low temperature (below 150 oC) thermal ALD processes for niobium oxide and copper have been enabled by its newest generation of precursor source design. The 2nd generation of the Picohot 300 source system allows even lower vaporization temperatures and efficient, uniform distribution of the precursor vapor in the reaction chamber even at low substrate temperatures. " “Our new processes for copper and niobium oxide show again the excellent quality of Picosun’s precursor source design, allowing true ALD processing also on thermally sensitive materials such as plastics and piezoelectrical elements. On several of Picosun’s main market areas such as MEMS, microelectronics, and corrosion protection, these processes further solidify our status as the leading solution provider of the thin film coating needs of today’s industries,” states Juhana Kostamo, Managing Director of Picosun.

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