Samsung has announced its memory chip fab in Xi'an China has begun full-scale manufacturing operations and the facility is producing NAND flash memory chips: 3D V-NAND.
The complete construction of this fab is done with in 20 months. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.
Samsung Electronics Vice Chairman and CEO Dr. Oh-Hyun Kwon said, "The city of Xi'an was the starting point of the Silk Road, which had performed a key role in bridging cultures from the East and the West. We expect that our new facility in Xi'an – the fruit of close cooperation with China, will mark the crowning of a 21st century Silk Road."
By commencing operations of its Xi'an fabrication line, Samsung said it has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.
Samsung intend to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.