Fujitsu and Transphorm have agreed to merge their gallium-nitride (GaN) power devices for power supplies businesses. Fujitsu Limited and Fujitsu Semiconductor will take a minority equity position in Transphorm.
Transphorm's CEO Fumihide Esaka said "Integrating Transphorm's operations with Fujitsu will enable high-volume and high-performance GaN power device production at Aizu-Wakamatsu, and we will also benefit from Fujitsu's strong technological capabilities underpinned by Fujitsu Groups' years of developments in the field of GaN power device. In addition to being a future user for GaN solutions, Fujitsu has also built customer relationships with many power management companies in Japan, one of the most important markets for Transphorm. These complementary strengths will enable us to become the world leader in the GaN power conversion business and allow our customers to use our GaN power solutions with confidence."
Fujitsu Limited's President Masami Yamamoto commented "This business integration, together with our contribution to Transphorm's management as a minority shareholder, will enable Fujitsu to meet Transphorm's needs by offering low-cost volume production, highly reliable technologies, and quality assurance methodologies. This collaboration will greatly accelerate the introduction and market share expansion of Transphorm's GaN power devices. While making efforts to promote the innovative value of more compact and exceptionally efficient power supply which only GaN technologies can provide, Fujitsu will aggressively work to embed GaN power devices into Fujitsu products as one component of our energy-saving solutions. Our work in the GaN RF device business continues to move forward, as does our drive to conduct advanced research on GaN devices and applied development of RF and power supply modules."
Fujitsu Semiconductor's President Haruki Okada says "From 2009, Fujitsu Semiconductor has moved forward on developing the mass production technology needed to bring GaN power devices to market, and at the end of 2011 began sample shipments of GaN power devices with 600 V breakdown voltage, followed by 150 V breakdown voltage GaN devices in July of this year. We have positioned GaN power devices as one of our future core products for the Aizu-Wakamatsu plant. The integration announced today will enable us to collaborate with Transphorm and leverage their technologies to accelerate the drive to mass production, and, we anticipate, contribute to the vitality of the Aizu-Wakamatsu region. With our track record and capabilities to mass produce silicon devices that meet the stringent quality requirements of customers in automotive, industrial equipment and other industries, the Aizu-Wakamatsu plant will also be able to offer GaN power devices that customers can purchase with confidence."