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Date: 03-09-13

imec and Veeco partner in cost-reduction of GaN-on-Si power devices

imec and Veeco Instruments are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.

Barun Dutta, imec’s Chief Scientist, commented, “The productivity, repeatability, uniformity and crystal quality of Veeco’s metal organic chemical vapor deposition (MOCVD) equipment has been instrumental in helping us meet our development milestones on GaN-on-Si for power and LED applications. The device performance enabled by the epi has helped us realize state-of-the-art D-mode (depletion mode) and E-mode (enhancement mode) power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology.”

Imec is developing process to produce GaN LED and power devices on 200 mm silicon substrates compatible with a 200 mm CMOS-compatible infrastructure.

Jim Jenson, Senior Vice President, General Manager, Veeco MOCVD, commented, “We have been working with imec on this program since 2011 and are encouraged by our progress. Our work is mutually rewarding, as we are both focused on being able to realize lower costs while maintaining world-class performance on GaN-on-Si devices. This technology can be used to create lower cost LEDs that enable solid state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles.”

imec praises Veeco’s MOCVD equipment for excellent film quality and low defects, which are key for effective GaN-on-Si processing. It also praises for product uniformity, run-to-run repeatability, high system availability, particle performance and high throughput.

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