Delta Energy Systems has designed its new generation of solar inverters using SiC power MOSFETs from Cree as switching devices. SiC MOSFETs increase power density and efficiency and reduce weight of solar inverters.
“The next-generation PV inverters from Delta are designed to set a new milestone of power density by utilizing SiC MOSFETs,” commented Mr. Klaus Gremmelspacher, head of research and development for PV inverters at Delta Energy Systems. “The SiC MOSFETs from Cree were essential for us to realize our goals for new, high-power inverters that are lightweight and have industry-leading efficiency.”
Utilizing 1200-V SiC MOSFET’s from Cree in an 11-kW PV inverter, Delta has already been able to extend the DC input voltage range while maintaining and even increasing the maximum efficiency of its previous products. The Delta 11-kW booster, which employs Cree’s SiC MOSFET and now has 1-kV DC input instead of 900-V, is targeted for release in Q2 2013, says Cree.
Dr. Scott Allen, senior director of marketing, Cree Power, remarked, “We are pleased and honored to have Delta Energy Systems as a customer for our SiC MOSFET. They are utilizing the 1200-V, 160 m-Ohm MOSFET, which has matured rapidly since its release in 2011 and offers industry-leading performance and cost. Advanced technology customers like Delta are now moving aggressively forward with our SiC MOSFET technology, which enables reduced size, weight and cost for PV inverters, from 20 to 50% when compared with silicon, while at the same time maintaining or increasing efficiency.”