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Date:10th June 2012
19nm node flash memory chips and cards
available from Toshiba and Sandisk
The requirement for large memory in small space is never
ending with personal multimedia information size growing
at enormous rate. The most popular NAND flash memory is
getting even smaller with 19nm semiconductor process node
used by leading NAND flash memory chip maker Toshiba.
Toshiba Corporation had stated its new 19nm generation
process technology can help assemble sixteen 64Gbit NAND
flash memory chips in one package and to deliver 128GB devices
for application in smartphones and tablet PCs. The 19nm
process products are also equipped with Toggle DDR2.0, which
enhances data transfer speed.
Samples of Toshiba 2-bit-per-cell 64-gigabit from Toshiba
were said to be available from the end of April 2012 and
mass production scheduled for the third quarter of the year
(July to September 2011).
Leading flash storage card vendor Sandisk has said it is
using 19nm technolgy chips in its 128GB iNAND Extreme product
which measures 12mm by 16mm package-size.
iNAND conforms to the new e.MMC 4.5 specification and can
achieve up to 45 megabyte per second (MB/sec) sequential
write and 100 MB/sec read speeds. The new generation of
iNAND Extreme also more than doubles the random write performance
of previous generations and significantly improves random
read performance, claims Sandisk.
Author: Srinivasa Reddy N
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