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Date:23rd May 2012
Automotive MOSFETs from NXP completes
extended lifetime testing for high-rel
NXP Semiconductors N.V. has introduced a new family of
automotive power MOSFETs based on NXP's Trench 6 technology,
featuring extremely low RDSon, high switching performance,
and better quality and reliability. Fully AEC-Q101 qualified,
NXP's new automotive-grade MOSFETs have completed extended
lifetime testing at 175°C for more than 1,600 hours
- significantly exceeding Q101 requirements - as well as
offering extremely low PPM levels.
The first products in NXP's new automotive MOSFET family
will be available in D2PAK, at voltage grades of 30V, 40V,
60V, 80V and 100V, with good RDSon performance across the
range. Future Trench 6 releases will be made in all other
automotive packages.
Trench 6 further enhances switching performance compared
to previous generations of TrenchMOS, enabling very low
QGD for a given RDSon, which is suitable for DC-DC switching
applications in the car.
"With our Trench 6 automotive power MOSFETs, we're
offering an optimized, high-reliability solution for virtually
every MOSFET socket in the car," said Ian Kennedy,
product marketing manager, NXP Semiconductors. "Through
extensive testing, we've demonstrated that Trench 6 - with
its simple, evolutionary architecture and proven track record
in the standard MOSFETs market over the past two years -
can deliver the quality and reliability required to last
the lifetime of the car."
Author: Srinivasa Reddy N
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