|
Date: 11th Apr 2012
Imec to present resistive RAM papers at
2012 VLSI Technology Symposium
At this year's Symposia on VLSI Technology and VLSI Circuits
(June 12-15, 2012 - Honolulu, USA,), imec and its partners
to present 10 papers on memory and logic scaling technology
and circuits. With 4 RRAM (resistive RAM) papers accepted,
the VLSI reviewing committee endorses the value of imec's
R&D program on emerging memory devices. And 5 papers
will address logic device scaling and characterization for
next-generation CMOS technologies.
Gosia Jurczak, Director of imec's emerging memory device
program: "In 2008, imec started with research activities
on RRAM in order to explore solutions to overcome the scaling
limitations of conventional Flash memory cells. We are very
pleased with this year's high appreciation of imec's RRAM
research papers at the VLSI Technology Symposium. This,
and, the fact that since 2008 all major memory players joined
our research program on emerging memory technologies, proves
the value of our RRAM research to the global industry."
Aaron Thean, Director of imec's logic device program: "We
are delighted that 5 imec papers on advanced logic device
process, design, and characterization have been accepted
for this year's Symposium on VLSI technology. It is definitely
an affirmation of the active device research work at imec
to extend Moore's Law scaling."
Overview of the papers with imec authors, accepted at the
VLSI symposia:
RRAM papers:
- Dynamic 'Hourglass' Model for SET and RESET in HfO2 RRAM
- R. Degraeve et al.
- Ultralow sub-500nA operating current high-performance
TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based
stack-engineering - L. Goux et al.
- Process-improved RRAM cell performance and reliability
and paving the way for
- manufacturability and scalability for high density memory
application - G.Kar et al.
- Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based
1T1R CBRAM system - L. Goux et al.
Logic scaling papers:
- Process control & Integration options of RMG Technology
for aggressively scaled devices - A. Veloso et al.
- Implementing cubic-phase HfO2 with ?-value ~ 30 in low-VT
replacement gate pMOS devices for improved EOT-Scaling and
reliability - L. Ragnarsson et al.
- 85nm-Wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs
Embedded Si0.75Ge0.25S/D Benchmarking and In-Depth Hole
Transport Study - J. Mitard et al.
- GeSn channel nMOSFETs: Material Potential and Technological
Outlook - Gupta et al.
- Atom Probe Tomography for 3D-Dopant Analysis in FinFET
Devices - Kambham et al.
VLSI circuits papers:
- A 700µW 8-Channel EEG/Contact-impedance Acquisition
System for Dry-electrodes - Mitra et al.
Author: Srinivasa Reddy N
|
