|
Date: 10th Jun 2011
KLA-Tencor ships first LMS IPRO5 reticle
metrology system
Semiconductor equipment maker KLA-Tencor Corporation has
shipped the first LMS IPRO5 reticle pattern placement metrology
system. The recipient, the Advanced Mask Technology Center
(AMTC) in Dresden, Germany, intends to use the system to
support development of advanced reticle technology that
will be used to pattern the most critical layers of the
industry's next-generation integrated circuits.
The development of the LMS IPRO5 was partially funded by
the German Federal Ministry of Education and Research (BMBF)
through project CDuR32, "Critical Dimension and Registration
for 32nm Mask Lithography." The purpose of the CDuR32
project is to accelerate advanced reticle development and
manufacturing for the Dresden region, already recognized
as a European center for electronics. CDuR32 is also aligned
with the goals of the European Nanoelectronics Initiative
Advisory Council (ENIAC) to help expand Europe's position
in nanoelectronics. Access to leading-edge metrology equipment
is crucial to ensuring that reticle features are sized and
positioned within the narrow tolerances specified for next-generation
chip manufacturing.
The German Metrology Institute (PTB) made significant contributions
to the project. They developed a reference metrology system
for the LMS IPRO5 to validate length and straightness measurements
and enable calibration of the tool. PTB scientists also
investigated the potential applicability of scatterometry
and electron and scanning probe microscopy for mask metrology,
through basic experimental and theoretical work.
At the outset of the project, the LMS IPRO product group
was part of the Microelectronic Inspection Equipment (MIE)
division of Vistec Semiconductor Systems. In September 2008,
the MIE division was acquired by KLA-Tencor. Development
and manufacturing of the industry-leading LMS IPRO product
line remains in Weilburg, Germany. The next-generation system,
the LMS IPRO5, is designed to support the stringent precision
and repeatability requirements for pattern placement metrology
of reticles supporting advanced lithography techniques and
3Xnm to 2Xnm node devices.
Source: KLA Tencor
|
