Date: 2nd Sept 2010

Cree demos 150mm SiC substrates to enhance productivity

Cree said it has demonstrated150-mm (6- Inch) SiC (silicon carbide) substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material. Cree had demonstrated 100-mm (4-inch), Zero-Micropipe, n-type SiC substrates back in May 2007. So in a span of 3 years, Cree has come out with another achievement in SiC semiconductor technology.

SiC is used in manufacturing opto-semiconductor devices such as LEDs and also in making power switching devices and RF power transistors for wireless communications. 150-mm will increase the devices per substrate/wafer by more than two times.

"Cree's achievement of 150-mm SiC substrates further demonstrates Cree's leadership in SiC materials technology," said Dr. Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, "We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range".

For more information visit: www.cree.com