Date: 5th Aug 2010
NanoGaN granted with 2 patents in the
LED opto semiconductor domain
IQE owned NanoGaN has been granted two opto semiconductor
related separate patents for the production of advanced
blue and green lasers and LEDs. Patent 2008-549935 has been
granted by the Japan Patent Office to NanoGaN. The title
of the patent is: "growth method using nanostructure
compliant layers and HVPE for producing high quality compound
semiconductor materials."
This patent protects NanoGaN for producing high quality,
free-standing gallium nitride opto-semiconductor substrates,
which are the base material for manufacturing high quality
blue and green semiconductor lasers and ultra high brightness
LEDs for Solid State Lighting ("SSL").
A second patent No.2446471, titled "production of
semiconductor devices" has been granted by the UK patent
office to protect the manufacturing of semiconductor devices
including laser diodes, LEDs and solar PV cells, directly
onto the nanocolumn platform, thus expanding the number
and type of substrates that can be used for epitaxy.
IQE acquired NanoGaN in October 2009 to develop a leadership
position in the emerging high growth markets for advanced
laser projection, high definition optical storage (including
Blue Ray products), high resolution laser printing and SSL
for industrial, commercial and residential lighting. NanoGaN's
core technology can also be used for making GaN based high
speed semiconductor chips for high power RF applications.
Professor Wang Nang Wang, founder of NanoGaN Limited and
Chief Scientific Adviser to the IQE Board said"The
granting of these patents covers all of the essential technologies
for producing free-standing gallium nitride using our proprietary
Hydride Vapour Phase Epitaxy (HVPE) process and nanocolumn
growth technique."
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