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   Date: 5th Aug 2010

NanoGaN granted with 2 patents in the LED opto semiconductor domain

IQE owned NanoGaN has been granted two opto semiconductor related separate patents for the production of advanced blue and green lasers and LEDs. Patent 2008-549935 has been granted by the Japan Patent Office to NanoGaN. The title of the patent is: "growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials."

This patent protects NanoGaN for producing high quality, free-standing gallium nitride opto-semiconductor substrates, which are the base material for manufacturing high quality blue and green semiconductor lasers and ultra high brightness LEDs for Solid State Lighting ("SSL").

A second patent No.2446471, titled "production of semiconductor devices" has been granted by the UK patent office to protect the manufacturing of semiconductor devices including laser diodes, LEDs and solar PV cells, directly onto the nanocolumn platform, thus expanding the number and type of substrates that can be used for epitaxy.

IQE acquired NanoGaN in October 2009 to develop a leadership position in the emerging high growth markets for advanced laser projection, high definition optical storage (including Blue Ray products), high resolution laser printing and SSL for industrial, commercial and residential lighting. NanoGaN's core technology can also be used for making GaN based high speed semiconductor chips for high power RF applications.

Professor Wang Nang Wang, founder of NanoGaN Limited and Chief Scientific Adviser to the IQE Board said"The granting of these patents covers all of the essential technologies for producing free-standing gallium nitride using our proprietary Hydride Vapour Phase Epitaxy (HVPE) process and nanocolumn growth technique."

          
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