Date: 22nd July 2010
Samsung and Toshiba join hands to develop
DDR NAND flash memory with 400Mbps interface
Samsung and Toshiba have joined hands to develop a double
data rate (DDR) NAND flash memory with a 400 megabit-per-second
(Mbps) interface, toggle DDR 2.0 specification, a high-performance
NAND flash memory technology. The high-performance NAND
memory is expected to benefit to a host of NAND-based mobile
and consumer electronics applications. Both companies will
support a standard industry specification to enable broad-scale
acceptance of this new high-speed technology.
"Our introduction of high-speed 30 nanometer class
NAND late last year served as an initial pathway for stimulating
acceptance of the new high-performance toggle DDR technology,"
said Dong-Soo Jun, executive vice president, memory marketing,
Samsung Electronics. "Now, continual upgrades in high-speed
performance will create new applications and broader market
opportunities for NAND flash memory. The rapid adoption
of fourth generation (4G) smartphones, tablet PCs and solid
state drives is expected to drive demand for a broader range
of high-performance NAND solutions."
"Toggle DDR provides a faster interface than conventional
NAND using an asynchronous design, delivering the benefits
of high-speed data transfer to a wider market, such as for
solid state drive (SSD) applications including enterprise
storage, mobile phones, multimedia terminals and consumer
products," said Masaki Momodomi, Technical Executive,
Memory product, Toshiba Corporation. "And we will continue
to make the best effort possible to create standard, high-speed
NAND Flash interface solutions with NAND vendors and customers,
which will accelerate the revolution in storage applications."
The current toggle DDR 1.0 specification applies a DDR
interface to conventional single data rate (SDR) NAND architecture.
The resulting NAND chip has a 133Mbps interface.
Samsung and Toshiba will focus on assuring a 400Mbps interface
for the toggle DDR 2.0 specification, which provides a three-fold
increase over toggle DDR 1.0, and a ten-fold increase over
40Mbps SDR NAND that is in use today.
Both companies support industry-wide adoption of the high-speed
specification, which would facilitate faster acceptance
of toggle DDR memory with hardware engineers and application
designers. Last month, each company started participating
in standardization efforts for the new technology through
the JEDEC Solid State Technology Association.
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