Hynix Semiconductor's 2Gb DDR3 DRAM devices Validated by Intel

Hynix Semiconductor said Intel has validated 2Gb (Gigabit) DDR3 DRAM made using 40nm class process technology.

Hynix's newly validated products are 2Gb DDR3 SDRAM component, 4GB (Gigabyte) DDR3 SODIMM (Small Outline Dual In-line Memory Module) and 2GB DDR3 UDIMM (Un-buffered Dual In-line Memory Module) at the operating speed of 1333MHz with 1.5V power supply.

Hynix says, its 40 nm DDR3 DRAMs offer productivity improvement of more than 60% over 50nm class process technology and consume 40% less power over the preceding products using 50nm class.

"The current mainstream density has been rapidly transferring from 1Gb to 2Gb for the higher performance servers market. We expect to secure the industry's best features of both 1Gb and 2Gb DDR3 products", said Mr. J.B. Kim, Chief Marketing Officer of Hynix.

Hynix has begun mass-producing this new 2Gb DDR3 using 40nm class. The Company also expects that the validation of RDIMM (Registered Dual In-line Memory Module) will be also completed within this year.

For more details visit www.hynix.com