IMS Research; SiC Schottky diode market to grow over 50% in 2010

According to the latest analysis from IMS Research, the SiC Schottky diode market was worth an estimated $29 million in 2009. It fell in line with the total power semiconductor market during the global downturn; but enjoyed strong demand in 2H 2009. Overall the SiC Schottky diode revenues were estimated to be 25% higher in 2009 than in 2008.

IMS Research's latest edition on "SiC & GaN Power - Quarterly Market Watch", projects the SiC Schottky diode market will increase by over 50% in 2010. PFC power supplies for server and telecom applications currently account for the most SiC Schottky diodes sold. The huge developments in the Chinese telecom and cellular infrastructure, and high system-efficiency standards generally, are driving their adoption. However, many industry experts believe PV inverters could become the largest market for SiC Schottky diodes within the next 3-4 years, depending on the growth of the PV inverter market.

Market Analyst, Josh Flood commented "Currently, SiC Schottky diodes are the only SiC power devices sold in large volumes. SiC JFETs are also available on the commercial market but have not yet succeeded to the same extent. However, Cree are set to introduce the SiC MOSFET this year, Transic will be releasing its SiC BJTs in 2H 2010, and Infineon will releases its SiC JFET in 2011; thus SiC power devices look very promising for the future."

IMS Research forecasts the SiC power semiconductor discrete and module market will be worth $110 million by 2012. Interestingly, the GaN power device market is projected to be worth $20 million in 2012. Although these GaN revenues are much lower than predicted by some other industry observers, they are much higher than SiC Schottky diodes achieved in their first three years on the market.