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   Date: 20th Apr 2010

Samsung shipping 20nm NAND flash memory chips

Samsung said it has started shipping 20 nanometer (nm) NAND flash memory chips with the storage capacity up to 32 gigabit (Gb) to its customers. The SD card or such similar card with Samsung's 20nm chips can support capacities in the range of 4GB through 64GB.

Samsung says its 20nm-class MLC NAND has a 50 percent higher productivity level than 30nm-class MLC NAND. The write performance of SD card with 20nm chips is 30 percent faster than the 30nm-class NAND and it delivers a speed-class rating of 10 (read speed of 20MB/s, write speed of 10MB/s).

Mr. Soo-In Cho, president, Memory Division, Samsung Electronics, said "In just one year after initiating 30nm-class NAND production, Samsung has made available the next generation node 20nm-class NAND, which exceeds most customers requirements for high-performance, high-density NAND-based solutions." He added, "The new 20nm-class NAND is not only a significant step forward in process design, but we have incorporated advanced technologies into it to enable substantial performance innovation."

          
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