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Date: 20th Apr 2010
Samsung shipping 20nm NAND flash memory
chips
Samsung said it has started shipping 20 nanometer (nm)
NAND flash memory chips with the storage capacity up to
32 gigabit (Gb) to its customers. The SD card or such similar
card with Samsung's 20nm chips can support capacities in
the range of 4GB through 64GB.
Samsung says its 20nm-class MLC NAND has a 50 percent higher
productivity level than 30nm-class MLC NAND. The write performance
of SD card with 20nm chips is 30 percent faster than the
30nm-class NAND and it delivers a speed-class rating of
10 (read speed of 20MB/s, write speed of 10MB/s).
Mr. Soo-In Cho, president, Memory Division, Samsung Electronics,
said "In just one year after initiating 30nm-class
NAND production, Samsung has made available the next generation
node 20nm-class NAND, which exceeds most customers requirements
for high-performance, high-density NAND-based solutions."
He added, "The new 20nm-class NAND is not only a significant
step forward in process design, but we have incorporated
advanced technologies into it to enable substantial performance
innovation."
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