Date: 9th Feb 2010
2 Gb DDR3 DRAM chip jointly developed
by Micron and Nanya
Micron and Nanya have jointly developed a 2-gigabit (Gb)
DDR3 memory device using their new copper-based 42-nanometer
(nm) DRAM process technology. This new DRAM chips works
at a voltage of 1.35 V compared to 1.5V for other older
generation devices.
The 1.35V operating voltage is expected to provide a savings
of up to 30% in these applications.
The 2Gb 42nm DDR3 device can throughput 1866 megabits of
data per second. The memory modules up to the size of 16GB
can be made using 2Gb chips.
"With the move to 42nm - and with a 3Xnm process working
in our R&D fab in Boise - Micron's expertise in copper
metallization and proprietary cell capacitor technology
has enabled us to stay on the cutting-edge of DRAM process
design and innovation," said Robert Feurle, vice president
of DRAM marketing of Micron. "The addition of this
new 2Gb 42nm device to our DRAM product line strengthens
our already rich portfolio of memory solutions for customers'
end applications."
"We are very pleased to offer this 2Gb DDR3, the most
competitive DRAM device in production, to our customers,"
said Dr. Pei Lin Pai, vice president of global sales and
marketing and spokesman for Nanya. "Nanya plans to
serve the server and PC market, as well as the consumer
market, with this latest technology device."
Availability: Samples in 2Q2010 and production in second
half of the year.
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