Infineon and Fairchild Semiconductor settle patent dispute on power transistors

Infineon and Fairchild Semiconductor have settled a patent infringement lawsuit. Infineon initiated the lawsuit in November 2008 in the U.S. District Court for the District of Delaware. The patents in the suit and counter suit consisted of fourteen patents related to super-junction power transistors along with trench power MOSFETs and IGBT power transistors.

The lawsuit has been settled through a broad patent cross license relating to semiconductor technology. As part of the agreement, Fairchild will make payments to Infineon. The specific terms and conditions of the agreement are confidential.

Infineon and Fairchild will inform the U.S. District Court, District of Delaware, that they had reached a settlement and will file a stipulation of dismissal.

Infineon says, it is currently in patent licensing discussions with a number of semiconductor companies. Infineon views such discussions as essential to the continuing protection of its intellectual property and business interests.

Both Infineon and Fairchild are leading vendors of discrete power semiconductor devices. Infineon is ranked number one in power semiconductor market for several years. Fairchild can be estimated to be in 3rd position in discrete power semiconductor market behind ST Microelectronics.