MagnaChip offers 0.11um, 30V process technology with small SRAM cell size

MagnaChip has announced that it offers a high performance 0.11um, 30V process technology, features a cost reduction by reducing the pitch of the high voltage transistor with the small SRAM cell size at the 0.11um node and reduced mask layers.

Channy Lee, Executive Vice President and General Manager of MagnaChip's Semiconductor Manufacturing Services, emphasized, "MagnaChip has been making substantial efforts to develop industry leading advanced 0.11um high voltage process technologies. We are very pleased to finally announce the offering of our advanced 0.11um 30V process technology to better meet the increasing demand for high volume and high growth target applications such as mobile handsets etc"

MagnaChip has combined the cost and device performance of the small chips with better leakage characteristics, high speed, more uniform and high isolation breakdown voltage and improved latch-up immunity.

Availability: Sampling now and mass production will begin in the first half of 2010.