Rambus unfolds DRAM innovations beyond DDR3

Rambus has released new techniques in improving DRAM speed, power consumption and performance to take them beyond current DDR3 data rate limits of 3200Mbps.

The Rambus DRAM advancements include:
1. FlexPhase Technology - introduced in the XDR memory architecture, can enable higher data rates     compared to direct strobing technology used in DDR3
2. Near Ground Signaling - supports high performance at reduced IO power, allowing operation at 0.5V     while signal integrity
3. FlexClocking Architecture - introduced in Rambus' Mobile Memory Initiative, reduces clocking power     by eliminating the need for a DLL or PLL on the DRAM
4. Module Threading - increases memory efficiency and reduces DRAM core power, and when     combined with Near Ground Signaling and FlexClocking technology, can cut total memory system     power by over 40%;
5. Dynamic Point-to-Point (DPP) - provides a path for capacity upgrades through reliable point-to-point     signaling.

Rambus has published a white paper providing more details on these technologies. The whitepaper named "Challenges and Solutions for Future Main Memory" is available for download at www.rambus.com.

"Product advancements in multi-core computing, virtualization and chip integration put ever-increasing demands on the memory sub-system, a key performance limiter in today's performance computing systems," said Craig Hampel, Rambus Fellow. "This collection of breakthrough innovations from Rambus allows for memory systems that are better suited for the bandwidth and workloads of these throughput-oriented multi-core processors, increasing the design and solution space for future main memory to enable a new generation of computing platforms."