ST Microelectronics and Soitec partner on backside-illumination (BSI) technology

ST Microelectronics and Soitec are working together in developing 300mm wafer-level backside-illumination (BSI) technology for image sensors in phones and digital camera fitted portables.

With the rising photo-resolution and reducing size of camera-modules inside handheld consumer gadgets there is demand for image sensors with smaller individual pixel sizes, while maintaining pixel sensitivity to produce high-quality images. Backside illumination technology helps to meet these requirements in image sensors.

As per the agreement Soitec will licene Smart Stacking bonding technology to ST for the manufacturing of backside-illumination sensors on 300mm wafers. Smart Stacking bonding technology enables molecular bonding, and chemical thinning.
ST Microelectronics plans to develop new Soitec technology applied image sensors using its advanced derivative- 65nm CMOS process technology at its 300mm facility in Crolles, France.

"Backside illumination technology is a key ingredient in the small-pixel, high-image-quality race for the development of leading-edge image sensors," said Eric Aussedat, Group Vice President and General Manager, Imaging Division, STMicroelectronics. "Partnering with Soitec will help quickly deploy the Smart Stacking technology into ST's camera products. This agreement will accelerate the development of advanced and superior cost-competitive image-sensor processes, and further confirms the Grenoble region as a world-class center of expertise for advanced CMOS imaging technologies."

"We are very pleased that STMicroelectronics has chosen our Smart Stacking technology for their BSI product," said André-Jacques Auberton-Hervé, chairman and president of the Soitec Group. "This technology developed by our Tracit business unit, supports fast implementation of advanced processes involving substrate engineering and 3D integration. We are glad to support ST's commitment to innovation for the benefit of their customers."