Toshiba to make single chip flash memory of 32 Gb capacity using 32nm process

Toshiba is sampling 32 Gb NAND flash memory devices manufactured using 32nm node fabrication technology. First batch of 32Gb chips will be for memory cards and USB memory plug-ins and later extended to embedded system products.

The demand for smaller size memories with higher capacities is increasing with the rising number of moblie digitized audio and video content users.

Toshiba will start mass production of 32Gb NAND flash memories in July 2009, two months ahead of its original plan. 16Gb products will start to ship from the third quarter of FY2009. (October to December 2009) The new chips will be produced at Toshiba's Yokkaichi Operations, in Mie prefecture, Japan.