10th Mar 09
Samsung producing NAND flash chips
in 40-nm process technology
Samsung Electronics has begun using 40-nanometer (nm) process
technology to produce an eight-gigabit (Gb) Flex-OneNAND
fusion memory chip. Samsung said in its press release, by
adopting advanced 40nm class technology, Samsung achieves
an increase in productivity of up to 180 percent over the
first Flex-OneNAND, a 4Gb device designed on 60nm-class
technology.
A month back, another NAND flash leader Toshiba has also
announced breakthroughs in multi-bit-per-cell technology
for NAND flash memories. In the 32 nanometer (nm) generation,
Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb)1 chip
with the world-smallest die size, and smaller than a 2-bit-per-cell
16Gb chip fabricated with 43nm technology, which is currently
in the market. These chips are to be mass-produced in the
second half of CY2009. Toshiba also fabricated the world's
first 64Gb chip that applies 4-bit-per-cell technology at
the 43 nm process generations.
Both these companies through their high capacity flash
memory chips are sure to bring down the traditional disk
drive market faster. The Solid State Drive (SSD) market
can be expected to take off more significantly once the
40nm and 32nm flash memory chips comes out in volumes.
|