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Date: 29th Jan 07
The secret metal alloy and Hafnium based
high K material push Intel one year ahead of competitors
Intel has announced, it is test running
Windows Vista and other few popular desktop operating systems
on it's five test samples of new 45nm microprocessor; code
named as Penryn.
Intel has used high K dielectric material based on Hafnium
and a new metal alloy (Intel not disclosed the details) at
the FET gate to increase the drive current by 20% in this
newly developed processor. This breakthrough technology combination
will reduce the leakage current by five times. Using this
technology the transistor density can be doubled.
The fall in leakage current reduces heat inside the chip and
also the power consumption.
All this points to the extension of Moore's
law for some more time.
Intel will alter it's 193nm dry lithography equipment with
some new techniques in masks and design rules, so that the
cost of establishing new fab is saved.
This new Penryn family also comes with 50 new Intel SSE4 instructions
to process audio and video data better.
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