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News

Date: 29th Jan 07

The secret metal alloy and Hafnium based high K material push Intel one year ahead of competitors

Intel has announced, it is test running Windows Vista and other few popular desktop operating systems on it's five test samples of new 45nm microprocessor; code named as Penryn.
Intel has used high K dielectric material based on Hafnium and a new metal alloy (Intel not disclosed the details) at the FET gate to increase the drive current by 20% in this newly developed processor. This breakthrough technology combination will reduce the leakage current by five times. Using this technology the transistor density can be doubled.
The fall in leakage current reduces heat inside the chip and also the power consumption.

All this points to the extension of Moore's law for some more time.

Intel will alter it's 193nm dry lithography equipment with some new techniques in masks and design rules, so that the cost of establishing new fab is saved.

This new Penryn family also comes with 50 new Intel SSE4 instructions to process audio and video data better.

 



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