NAND Flash to be mass-produced at 34 nm by Intel and Micron

Intel and Micron's NAND flash joint venture IM Flash Technologies has developed 34nm, 32-gigabit multi-level cell (MLC) NAND flash memory device. The 32 Gb monolithic NAND chip fits into standard 48-lead thin small-outline package (TSOP). The Joint venture's Lehi facility will manufacture 50 percent of its capacity by using 34nm by year 2008 end.

The 34nm, 32 Gb chips are manufactured on 300 mm wafers. Measuring 172mm², less than the size of a thumbnail, the 34nm, 32 Gb chip will enable high-density solid-state storage in digital consumer media gadgets and SSDs (solid-state drives).

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.