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Date: Nov 20 2006
ST Micro and Velox Semiconductor
signed agreement to launch new range of GaN Schottky diodes jointly.
GaN, a wide band-gap semiconductor material
mostly limited to latest Optoelectronic devices is now researched
further by Velox Semiconductor to use it as low loss switching
diode in switch mode power supplies. Velox has this technology
ready with the plans to release 600V GaN Schottky diodes shortly.
ST Microelectronics, by agreeing to jointly release these
products with Velox has certified GaN diodes worthiness. There
are many chances for a startup to fail on new technologies,
but here ST Micro's support as an alternate supplier will
not make your GaN based designs obsolete that easily.
The advantage of GaN devices are,
low switching losses, no voltage shoot during turn off, and
improved temperature performance.
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