Z-RAM memory technology breakthrough by Innovative Silicon

At 2008 IEEE International SOI Conference, Innovative Silicon demonstrated the advantages of Z-RAM memory over DRAM and other proposed floating body memory designs.
In the paper delivered by Dr. Mikhail Nagoga, titled "Ultra-scaled Z-RAM cell," Z-RAM cells based on Multiple-gate SOI MOSFETS (MUGFETs) with gate length down to 50nm and fin width down to 11nm were demonstrated.

Based on simulations the basic operational principles are effective on Z-RAM cells with gate lengths down to 12.5nm and fin widths of 3nm. MUGFET devices exhibit the largest programming window (margin). Measured as the difference in current between STATE 1 and STATE 0, the programming window of these devices is close to 22µA.

Innovative silicon is working closely with Hynix to make Z-RAM as mainstream technology.
For further details visit http://www.innovativesilicon.com
.