Date:25th Oct 2011

JSR Micro joins CEA-Leti to develop sub-20nm maskfree lithography material

JSR Micro and CEA-Leti are collaborating to develop next- generation lithography materials and processes used in semiconductor equipment of advanced nodes at less than 20nm.

The program will focus on pitch division to further extend 193nm optical lithography for logic applications below the 20nm node and on direct-write lithography, a maskless lithography (ML2) technology, says JSR Micro.

The specific ML2 development will be part of the IMAGINE program, a three-year project led by CEA-Leti that also includes semiconductor manufacturers TSMC and STMicroelectronics. It is developing a maskless lithography infrastructure and the use of MAPPER Lithography tools for high throughput.

JSR Micro states that its key focus areas are to enable sub-20nm technology development with a strong focus on next-generation lithography.

"JSR has a good understanding on what our customers need in terms of materials innovation, product performance, continuous quality and cost requirements and manufacturing," said Bruno Roland, President of JSR Micro. "The collaboration with CEA-Leti is therefore a great opportunity to join a large and ambitious program, and participate in challenging new lithography developments with realistic market targets. In addition to extending optical lithography, this collaboration gives us an unique opportunity to contribute to the development of ML2."

"The development of materials and processes is one of the main challenges facing lithography at the sub-20nm range," said Serge Tedesco, CEA-Leti program manager. "Pushing standard optical lithography in combination with new techniques, as maskless lithography, seems a real alternative and we are very excited to be supported by JSR in exploring these new areas."