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Date: 15-04-16

Mitsubishi Electric to sample new power modules with 7th gen IGBT

Mitsubishi Electric sampling its new G1 series intelligent power module (IPM1) using its low-power consuming and also reliable insulated-gate bipolar transistors (IGBTs) for applications such as general-purpose inverters, servo amplifier, elevators and other industrial equipment. Sample shipments will begin in May.

Mitsubishi is displaying these Power modules at MOTORTECH JAPAN 2016 during TECHNO-FRONTIER 2016 in Japan from April 20 to 22.

The highlighted features of these power modules includes:

Dedicated IC offering self-protection functions, Relaxed Field of Cathode (RFC) diode chip incorporating new backside diffusion process achieves low power loss and suppression of recovery-voltage surge. Mitsubishi Electric's original IGBT chip construction incorporating carrier-store effect. P layer is added partially on cathode side and the hole is injected during recovery term to soften the recovery waveform and to suppress the surge voltage, explains Mitsubishi in its release.

This device is made used in new packaging technology where the main terminal shape optimised to realise approximately 30 percent reduction in package size compared to the previous product so that inverters designed using these modules are compact. Insulation and copper base is integrated in the substrate to increase thermal cycle life.

These power modules also feature three error mode cause isolation function: Over Temperature Protection (OT), Supply Under Voltage-lock Protection (UV), Short-Circuit Protection (SC).

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