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Date: 24-10-15

ST's new super-junction power MOSFETs offer Vds breakdown voltage of 1500V

MDmesh K5 , the new family of Power MOSFETs from STMicroelectronics features super-junction technology with a drain-to-source breakdown voltage of 1500V. ST says these are already selected by major customers in Asia, Europe, and the USA. MDmesh K5 serves the needs of high output power in auxiliary switched-mode power supplies in servers and also in industrial applications such as welding and factory automation. For these applications, where power output ranges from 75W to 230W or above, super-junction MOSFET technology is the preferred choice because of its outstanding dynamic-switching performance, says ST. ST claims MDmesh K5 designed to offer lowest On-Resistance (Rds(on)) per area and the lowest gate charge (Qg) in the market, resulting in the industry's best FoM (Figure of Merit). The devices are suggested as ideal for all popular power-supply topologies, including standard, quasi-resonant and active-clamp flyback converters, and LLC2 half bridge converters for applications where high efficiency (up to 96%) and output powers approaching 200W are required for a wide range of input voltages. The first two members of the new family are the STW12N150K5 and the STW21N150K5, which offer maximum drain-to-source currents of 7A and 14A, respectively, with gate charge as low as 47nC (STW12N150K5) or On-Resistance as low as 0.9Ω (STW21N150K5). Both devices are offered in TO-247 packages in volume quantities at prices of $14 for 1,000 units. For more info visit: www.st.com/mdmeshk5

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