STMicroelectronics has introduced 60V MOSFET devices for telecom, server, and desktop-PC power supplies, and industrial power supplies and DC/DC converters in solar micro-inverters, supporting high energy-efficiency specifications and maximum power density.
STripFET F7 MOSFETs feature trench-gate structure, which allows very low on-resistance, capacitance, and gate charge with a superior figure of merit (RDS(ON) x Qg). STripFET F7 MOSFETs's intrinsic body diode has low recovery charge, which contributes to faster switching and high avalanche ruggedness ensures robust performance under harsh electrical conditions and the low ratio of reverse-transfer capacitance to input capacitance (Crss/Ciss) increases EMI immunity.
ST says its 60V STripFET F7 MOSFETs are tailored for synchronous rectification and allow fewer parallel devices for the desired maximum current, which helps increase power density and lower the component count. The range comprises 12 part numbers, covering industry-standard power packages and maximum current from 90A to 260A (silicon-limited continuous drain current at Tc = 25°C). The packages supported are PowerFLAT 5x6, PowerFLAT 3.3x3.3, DPAK, D2PAK, TO-220, TO-220FP, and 2-lead or 6-lead H2PAK.
All devices are in mass production now, and available from $0.98 for the 90A STL90N6F7 in PowerFLAT 5x6 for orders of 1000 units.
For further information visit: www.st.com/stripfetf7