Toshiba said it is sampling 256 Gb three-dimensional Stacked NAND flash memory chips using a technology called 48-layer BiCS FLASH from the month of September 2015. The high-capacity NAND flash uses 3-bit-per-cell (triple-level cell, TLC) technology. The applications suggested for this 256Gb memory chip includes solid-state drives and also smart mobile devices.
Toshiba said it is currently readying for mass production of BiCS FLASH in a new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.
In another related news, Toshiba has also announced next generation of enterprise solid state drives (eSSDs), which are available in capacities up to 3.84TB.