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Date: 02-06-15

Dilute nitride based high efficiency 4-J Solar PV cell by 2016, by Silicon Junction

Solar Junction has announced it is fast developing a fully lattice-matched, four-junction (4J) space solar PV cell by using its proprietary dilute nitride tech, with predicted air mass zero (AM0) efficiencies exceeding 33% by 2016.

Solar Junction said it is currently producing a high efficiency three-junction (3J) space cell using its dilute nitride material as the bottom active junction on a GaAs substrate. Aerospace Corporation's two Aerospace AeroCube picosats currently on-orbit (since June 2014) are powered by Solar Junction 3J space cells. Based on the performance results shared by Aerospace Corporation, Solar Junction claims dilute nitride materials have radiation hardness comparable to conventional cells and show great promise for Solar Junction’s next-gen space products.

Solar Junction said it has proven that dilute nitrides can be produced in high volume on 6-inch semiconductor wafers with industry leading manufacturing yields and significant cost savings using molecular beam epitaxy (MBE) process. Solar Junction's dilute nitride technology is lattice matched on both Ge and GaAs substrates, provides a range of bandgaps between 0.9 eV and 1.4 eV, and is the only technology platform that enables low-cost monolithic growth beyond three junctions, says Solar Junction.

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