SiC Junction transistor-rectifier module from GeneSiC

20 mOhm-1200 V silicon carbide (SiC) Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging is now available from GeneSiC Semiconductor for use in high frequency power converters, so that the overall size and weight of the converters can be reduced. The applications suggested includes induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies. Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offer 10 microsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low Gate voltages, unlike other SiC switches, claims GeneSiC. SiC Schottky Rectifiers used in these mini-modules feature low on-state voltage drops, good surge current ratings and low leakage currents at higher temperatures. With temperature independent, near-zero reverse reco...