Samsung has launched 3-D NAND flash-based high-density 128 gigabyte (GB) eMMC 5.0 storage, enabling midmarket smartphones and tablets with higher Flash memory storage, comparable to high-end smart phones. The new 128GB eMMC 5.0 features read speeds of 260 megabytes per second (MB/s) for sequential data reading, offering the same performance MLC NAND-based eMMC 5.1 memory. For random data read and write operations, 128GB eMMC 5.0 can handle up to 6,000 IOPS (input/output operations per second) and 5,000 IOPS respectively, which Samsung says is sufficient for supporting high definition video processing and advanced multi-tasking features. These IOPS speeds are approximately four and 10 times faster than external memory card. Based on the 3D V-NAND technology, Samsung has also unveiled the 850 EVO M.2 and 850 EVO mSATA solid state drive (SSD) lineups. The Samsung 850 EVO mSATA comes in 1 terabyte (TB), 500 gigabyte (GB), 250GB and 120GB capacities and boasts the same top-notch read/write speeds as the 2.5-inch 850 EVO, with read speeds of up to 540 megabytes per second (MB/s) and write speeds of up to 520 MB/s. The 850 EVO M.2 will be available in 500GB, 250GB and 120GB capacities, offer read speeds of up to 540 MB/s and write speeds of up to 500MB/s.