RF semiconductor specialist M/A-COM unveiled a new HEMT pulsed power transistor for L band 960 to 1215 MHz avionics Applications. The 650 watts output power delivering gallium nitride on silicon carbide (GaN on SiC) technology based MAGX-000912-650L00/MAGX-000912-650L0S is a gold metalized, internally matched, depletion mode RF power transistor. MAGX-000912-650L0x is ruggedized version with mean time to failure (MTTF) of 600 years. MAGX is a popular GaN RF pulsed power transistors series from M/A COM covering wide range of microwave applications in aerospace and defence.
MAGX-000912-650L0x offers a typical gain of 20 dB and 62% drain efficiency. M/A COM says "The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), which enables reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies."
Flat gain versus frequency performance and a common-source configuration for broadband class AB operation features are also highlights of these RF transistors.
The MAGX-000912-650L0x is optimized for civilian and military pulsed avionics amplifier applications in the 960 to 1215 MHz range, for Mode-S, TCAS, JTIDS, DME and TACAN operation. MAGX-000912-650L00 and MAGX-000912-650L0S is available in standard flange or earless flange packaging.
“The transistor is a clear leader in high pulsed power GaN technology with 650 W of output power combined with excellent gain, efficiency and rugged performance,” said Gary Lopes, Senior Product Director, MACOM. “The device is an ideal candidate for customers looking to upgrade L-Band avionics systems to the next level of pulsed power performance and experience the solid reliability that is offered by MACOM GaN solutions.”
The MAGX-000912-650L0x is RoHS Compliant and 260°C reflow compatible.
To give you some idea on HEMT ( high electron mobility transistor), it is a technology which uses specialised PN junction, which is also known as hetero junction where it uses different type of semiconductor materials.