Do you want to increase the power performance of your inverter without increasing the size of MOSFET, then go for replacing your silicon MOSFETs with new Gallium Nitride MOSFETs or Silicon Carbide (SiC) MOSFETs.
The newly launched GaN Cascode transistors jointly by On Semiconductor and Transphorm are offered in typical on-resistances of 290 milli ohms and 150 milli ohms. The two new products, NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) are available in optimized TO-220 package. You can easily expect an increase of 30-40% power handling capability by using Gallium Nitride MOSFETs over Silicon. The switching also going to be smoother in GaN.
There is also 240 W reference design available from these vendors that utilize these GaN MOSFETs.
“GaN transistors offer a performance leap for switching power supplies and other applications where efficiency and power density are critical,” said Paul Leonard, vice president and general manager of the ON Semiconductor power discrete division. “As more engineers become familiar with the benefits of gallium nitride devices, the demand for GaN-based products will rapidly increase. ON Semiconductor and Transphorm are working to be at the forefront of new development and accelerate widespread adoption in the marketplace.”
600 V products have been qualified using JEDEC standards and are in mass production.
Well, GaN and SiC are lot expensive compared to Si MOSFETS and IGBTs.