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Date: 06-02-15

SiC MOSFETs from ST for inverter design

The new SCT20N120 silicon-carbide power MOSFET with on-resistance (RDS(ON)) better than 290 milli-ohms all the way to the 200°C maximum operating junction temperature highly suggested for applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.

The 1200V SCT20N120's switching performance is also consistent over temperature due to its highly stable turn-off energy (Eoff) and gate charge (Qg). The low conduction and switching losses and ultra-low leakage current, simplify thermal management and maximize reliability.

ST’s silicon-carbide MOSFETs can switch at frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.

The SCT20N120 comes with the added advantage of ST’s proprietary HiP247 package with enhanced thermal efficiency, which allows reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline.

The SCT20N120 is in full production, priced from $8.50 for orders of 1000 pieces.

For further information please visit: http://www.st.com/sicmos

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