Veeco Instruments introduces Propel Power Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system featuring single-wafer 200mm reactor platform to increase film uniformity, yield of compound semiconductor devices. Veeco’s new Propel Power GaN MOCVD system can process six and eight-inch wafers, the system deposits high-quality GaN films for the production of power semiconductor devices.
In another announcement Altatech has unveiled a new tool, which can pinpoint the size and location of nano-scale defects inside compound semiconductor materials and transparent substrates used in production of high-brightness LEDs, power semiconductors and 3D ICs.
Inspection is performed using Altatech’s patented synchronous Doppler detection technology, which determines the exact size and position of defects by making direct physical measurements with resolution below 100 nm. This methodology provides true defect sizing, whereas other types of inspection equipment on the market make indirect measurements using diffracted light to calculate approximate defect sizes, as per Altatech.
The system can handle substrates up to 300 mm. Throughput is more than 85 wafers per hour for 200-mm substrates and more than 80 wafers per hour for 300-mm substrates.