Vertically stacked semiconductor-wafers of flash-memory-cells is now the major trend in NAND flash memory. The three-dimensional vertical integration helps in achieving more memory per chip without going for difficult to achieve nodes such as 7nm for semiconductor memory fabrication.
Many in the solid-state memory industry believe two-dimensional NAND flash technology could better only be scaled to 10nm and further to that 3D NAND would take over. 3D NAND feature More than 32 layers.
Toshiba, Micron and Samsung are leading in the area of 3-D Memory fabrication which not only covers Flash memory but also DRAM.
Samsung is ahead here by started Mass production of industry's first 3-bit 3D V-NAND Flash Memory.
The 3-bit V-NAND chip from Samsung is made by stacking 32 layers of silicon wafer cells. Each 3-D chip provides 128 gigabits (Gb) of memory storage. Cell in each layer is electrically connected to a non-conductive layer using charge trap flash (CTF) technology.
The use of 3 bit-per-cell, 32-layer vertically stacked cell arrays sharply raises the efficiency of memory production. Samsung says efficiency of production of 3-D NAND is better than 3-bit planar NAND flash.
Samsung had earlier announced a solid state drive (SSD) with a capacity of 1 TB by using 3D vertical NAND flash memory chips. The SSD made using 3-D NAND offers read performance up to 550 megabytes per second (MB/s), with write performance of up to 520MB/s. Random read performance is up to 100,000 input/output operations-per-second (IOPS), with write speeds of up to 90,000 IOPS.
Samsung has also added Dynamic Thermal Guard feature in these devices to prevent potential data loss from overheating.
The Samsung 850 PRO is offered in 128 gigabyte (GB), 256GB, 512GB and 1 terabyte (TB) storage capacities.