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Date: 17-09-14

Less expensive GaN-on-Si LED lamps from Toshiba

Toshiba has extended its LETERAS1 family of white LEDs with the new TL1L3 series features ultra-compact devices that combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package.

Instead of expensive sapphire substrates using relatively small 100mm or 150mm semiconductor wafers., Toshiba has used cost-effective GaN-on-Si process technology that allows GaN LEDs to be produced on 200mm silicon wafers. The integrated lenses in Toshiba's newest LEDs make them suitable for implementation in security lighting, road lights, LED bulbs, down lights, and more.

LEDs are estimated to make up 53 percent of the global lighting market over the next few years.

TL1L3 series of 1.0W LEDs are housed in a 3.5mm x 3.5mm package, with a height (including the lens) of 2.42mm. TL1L3 LEDs deliver up to 145 lumens (typ), depending on the correlated color temperature (CCT) .

The seven new devices in TL1L3 LED series offer color temperatures from 2700K to 6500K. Minimum color rendering index (Ra) ratings of up to 80 contribute to natural-looking lighting. A low typical forward voltage (VF) of just 2.85V (at a forward current of 350mA) helps to keep power consumption at a minimum .

TL1L3 LEDs are rated for operating temperatures between -40°C and 100°C and have a maximum power dissipation of 3.4W. Additionally, they offer a very low typical thermal resistance Rth (j-s) from LED junction to solder point of only 5°C/W .

For more details visit www.toshiba.com/taec/

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