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Date: 20-09-14

20nm 6Gb LPDDR3 Mobile DRAM chip from Samsung in mass production

Samsung started volume production of its 6 Gb low-power double data rate 3 (LPDDR3) mobile DRAM by using its 20 nanometer (nm) fab.

Samsung said it's new 6Gb LPDDR3 offers data transfer rate of up to 2,133 megabits per second (Mbps) at each pin. A 3GB (gigabyte) LPDDR3 package can be created by using four 6Gb LPDDR3 chips.

The new 3GB package is more than 20 percent smaller and consumes about 10 percent less energy than the currently available 3GB package with 6Gb LPDDR3 chips fabricated using Samsung’s previously lowest process technology, as per Samsung.

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