Lam Research unveiled its latest thin film deposition and plasma etch products for 3D NAND fabrication in handling tasks such as stack deposition, vertical channel etching , and tungsten wordline deposition.
The equipment named VECTOR Q Strata PECVD deposits multilayer film stacks of both oxide/nitride (ONON) and oxide/polysilicon (OPOP) film stack deposition.
Lam's 2300 Flex F Series dielectric etch system uses high ion energy source with modulation to create vertical channel through the stack.
The tungsten depositing ALTUS Max ICEFill system controls variability by providing void-free fill of the geometrically complex 3D NAND wordlines. Using a proprietary filling technique, the new system creates the tungsten wordlines with an inside-out atomic layer deposition (ALD) process.