MACOM has announced a license and epitaxial (epi) wafer supply agreement which will enable IQE, the world's largest supplier of compound semiconductor epi, to manufacture GaN-on-Silicon epi at 4, 6 and 8-inch diameters in high volume for RF applications. This move is expected to allow MACOM to deliver GaN RF products with breakthrough bandwidth and efficiency at mainstream 8-inch silicon cost structures, claims MACOM.
MACOM also announced that it is in active discussions to make GaN-on-Silicon technology available to select companies for use in RF applications.
"We are nearing a watershed moment for the RF & Microwave industry, promising breakthrough performance for compound semiconductors and leveraging large-scale silicon production facilities that operate at orders of magnitude greater economies of scale," said John Croteau, President and CEO, MACOM. "We believe our recent acquisition of Nitronex and its portfolio of fundamental IP rights related to GaN-on-Silicon materials, process, and device technology for RF applications provides us with the foundation for a licensing program that will help bring our vision of GaN performance at mainstream 8-inch silicon cost structures a reality."
"We are beginning to see very significant traction for GaN occurring in the compound semiconductor industry, across a wide range of applications," said Drew Nelson, President & CEO, IQE. "Our agreement with MACOM allows us to further penetrate this new market by bringing decades of high volume production experience to create the necessary supply chain needed to accelerate GaN adoption. We look forward to a powerful ongoing relationship."