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Rf-microwave
Date: 09-10-13

RF antenna switch with MIPI RFFE interface

Toshiba has developed an SP10T RF antenna switch with a MIPI RFFE interface with low insertion loss and of small size for the smartphone design.

The new product uses advanced RF SOI process using silicon on insulator (SOI) technology. By using this advanced new process called TaRF5 process, Toshiba achieved a 25% improvement in insertion loss (f=2.7GHz) and a 40% size reduction against products using the previous version of the process.

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