Opto Diode has introduced the OD-669-850 high-power gallium aluminum arsenide (GaAlAs) semiconductor material based infrared light-emitting diode (IRLED) illuminator as ideal infrared light source for night vision illumination tasks. This IRLED produces optical output, from 800 (minimum) to1250 mW (typical) and a peak emission wavelength of 850 nm.Opto Diode says OD-669-850 generates uniform optical beam.
Other specifications shared by Opto Diode includes:
The spectral bandwidth at 50% is typically 40 nm, and the half-intensity beam angle is 120 degrees. All surfaces on the standard 2-lead, TO-66 electrically-isolated package are gold plate.
The OD-669-850 IRLED illuminator’s operating and storage temperatures range from - 40 degrees C to +100 degrees C with a maximum junction temperature of 100 degrees C. Power dissipation (under absolute maximum ratings at 25 degrees C) is 6 W, with a continuous forward current of 370 mA, a peak forward current of 1A and reverse voltage at 5 V. The lead soldering temperature (at 1/16 in. from case for 10 seconds) is 260 degrees C.
More info is available at www.optodiode.com/pdf/OD669-850.pdf.