Toshiba Corporation has launched the 4th generation of its system super junction MOSFETs, the "DTMOS Ⅳ" series of 650V devices. The "TK14A65W" has been launched as the initial product in the series and full-scale mass production is scheduled to start in August, 2013.
Using the latest single epitaxial process, the series reduces the Ron·A (on resistance per area) by approximately 50% compared to existing 650V "DTMOS Ⅱ" series. This allows a line-up of small packages, contributing improved power efficiency and downsizing of products into which they are integrated.
Part Number: TK14A65W
RDS(ON): 0.25 ohms at VGS = 10V
Qg (Typ): 35 nano Coulomb
Ciss Typ.: 1300 pico Farads