Toshiba Corporation has expanded its line-up of low voltage N-channel MOSFETs, used in protection circuits for lithium ion batteries and the power management switches of mobile equipment, with the "TPN2R203NC". Fabricated with eighth generation process, TPN2R203NC realizes low ON-resistance, which reduces conduction loss in equipment.
Eighth generation process realizes low ON-resistance.
TSON Advance package with good thermal conductivity.
High avalanche resistance.
Main specifications Part Number Package VDSS (V) RDS(ON) (mΩ)
Typ. Max Typ. Max
TPN2R203NC TSON Advance 30 1.8 2.2 2.8 3.6
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